field-effect transistors – The InfoGreenGlobal https://infogreenglobal.com The InfoGreenGlobal Thu, 14 Dec 2023 12:30:27 +0000 en-US hourly 1 Nonvolatile memory based on ferroelectric – graphene field – effect transistors https://infogreenglobal.com/nonvolatile-memory-based-on-ferroelectric%e2%80%93graphene-field-effect-transistors/ https://infogreenglobal.com/nonvolatile-memory-based-on-ferroelectric%e2%80%93graphene-field-effect-transistors/#respond Wed, 16 Feb 2011 16:19:01 +0000 http://infogreenglobal.com/?p=2501 A fundamental component of a field-effect transistor (FET) is the gate dielectric, which determines the number of charge carriers—electrons or electron vacancies—that can be injected into the active channel of the device. Graphene has recently become the focus of attention as a viable, high-performance replacement for silicon in FETs, and in recent studies on graphene-based […]

<p>The post Nonvolatile memory based on ferroelectric – graphene field – effect transistors first appeared on The InfoGreenGlobal.</p>

]]>
https://infogreenglobal.com/nonvolatile-memory-based-on-ferroelectric%e2%80%93graphene-field-effect-transistors/feed/ 0